Temperature and wavelength dependent trap filling in M2Si5N8:Eu (M=Ca, Sr, Ba) persistent phosphors
Identifieur interne : 000882 ( Main/Exploration ); précédent : 000881; suivant : 000883Temperature and wavelength dependent trap filling in M2Si5N8:Eu (M=Ca, Sr, Ba) persistent phosphors
Auteurs : Philippe F. Smet [Belgique] ; Ken Van Den Eeckhout [Belgique] ; Adrie J. J. Bos [Pays-Bas] ; Erik Van Der Kolk [Pays-Bas] ; Pieter Dorenbos [Pays-Bas]Source :
- Journal of luminescence [ 0022-2313 ] ; 2012.
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- Pascal (Inist)
- Wicri :
- topic : Dopage.
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Abstract
The evaluation of persistent phosphors is often focused on the processes right after the excitation, namely on the shape of the afterglow decay curve and the duration of the afterglow, in combination with thermoluminescence glow curve analysis. In this paper we study in detail the trap filling process in europium-doped alkaline earth silicon nitrides (Ca2Si5N8:Eu, Sr2Si5Ng:Eu and Ba2Si5N8:Eu), i.e., how the persistent luminescence can be induced. Both the temperature at which the phosphors are excited and the spectral distribution of the excitation light on the ability to store energy in the phosphors' lattices are investigated. We show that for these phosphors this storage process is thermally activated upon excitation in the lower 5d excited states of Eu2+, with the lowest thermal barrier for europium doped Ca2Si5N8. Also, the influence of co-doping with thulium on the trap filling and afterglow behavior is studied. Finally there exists a clear relation between the luminescence quenching temperature and the trap filling efficiency. The latter relation can be utilized to select new efficient 5d-4f based afterglow phosphors.
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Smet</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>LumiLab, Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1</s1><s2>9000 Gent</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Belgique</country><placeName><region type="province" nuts="2">Province de Flandre-Orientale</region><settlement type="city">Gand</settlement><settlement type="city">Gand</settlement></placeName><orgName type="university">Université de Gand</orgName></affiliation><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Center for Nano- and Biophotonics (NB-Photonics), Ghent University</s1><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Belgique</country><placeName><settlement type="city">Gand</settlement><region>Région flamande</region><region type="district" nuts="2">Province de Flandre-Orientale</region></placeName><orgName type="university">Université de Gand</orgName></affiliation></author><author><name sortKey="Van Den Eeckhout, Ken" sort="Van Den Eeckhout, Ken" uniqKey="Van Den Eeckhout K" first="Ken" last="Van Den Eeckhout">Ken Van Den Eeckhout</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>LumiLab, Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1</s1><s2>9000 Gent</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Belgique</country><placeName><region type="province" nuts="2">Province de Flandre-Orientale</region><settlement type="city">Gand</settlement><settlement type="city">Gand</settlement></placeName><orgName type="university">Université de Gand</orgName></affiliation><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Center for Nano- and Biophotonics (NB-Photonics), Ghent University</s1><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Belgique</country><placeName><settlement type="city">Gand</settlement><region>Région flamande</region><region type="district" nuts="2">Province de Flandre-Orientale</region></placeName><orgName type="university">Université de Gand</orgName></affiliation></author><author><name sortKey="Bos, Adrie J J" sort="Bos, Adrie J J" uniqKey="Bos A" first="Adrie J. J." last="Bos">Adrie J. J. Bos</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Delft University of Technology, Faculty of Applied Sciences</s1><s2>2629 JB Delft</s2><s3>NLD</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>2629 JB Delft</wicri:noRegion></affiliation></author><author><name sortKey="Van Der Kolk, Erik" sort="Van Der Kolk, Erik" uniqKey="Van Der Kolk E" first="Erik" last="Van Der Kolk">Erik Van Der Kolk</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Delft University of Technology, Faculty of Applied Sciences</s1><s2>2629 JB Delft</s2><s3>NLD</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>2629 JB Delft</wicri:noRegion></affiliation></author><author><name sortKey="Dorenbos, Pieter" sort="Dorenbos, Pieter" uniqKey="Dorenbos P" first="Pieter" last="Dorenbos">Pieter Dorenbos</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Delft University of Technology, Faculty of Applied Sciences</s1><s2>2629 JB Delft</s2><s3>NLD</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>2629 JB Delft</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">Journal of luminescence</title><title level="j" type="abbreviated">J. lumin.</title><idno type="ISSN">0022-2313</idno><imprint><date when="2012">2012</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Journal of luminescence</title><title level="j" type="abbreviated">J. lumin.</title><idno type="ISSN">0022-2313</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term><term>Alkaline earth metals Silicon Nitrides Mixed</term><term>Charge carrier trapping</term><term>Doping</term><term>Energy levels</term><term>Europium additions</term><term>Excitation spectrum</term><term>Glow discharges</term><term>Phosphors</term><term>Temperature effects</term><term>Ternary compounds</term><term>Thermal barriers</term><term>Thermoluminescence</term><term>Tunnel effect</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet température</term><term>Spectre excitation</term><term>Dopage</term><term>Thermoluminescence</term><term>Addition europium</term><term>Décharge luminescente</term><term>Piégeage porteur charge</term><term>Energie activation</term><term>Niveau énergie</term><term>Métal alcalinoterreux Silicium Nitrure Mixte</term><term>Barrière thermique</term><term>Effet tunnel</term><term>Composé ternaire</term><term>Matériau luminescent</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The evaluation of persistent phosphors is often focused on the processes right after the excitation, namely on the shape of the afterglow decay curve and the duration of the afterglow, in combination with thermoluminescence glow curve analysis. In this paper we study in detail the trap filling process in europium-doped alkaline earth silicon nitrides (Ca<sub>2</sub>Si<sub>5</sub>N<sub>8</sub>:Eu, Sr<sub>2</sub>Si<sub>5</sub>Ng:Eu and Ba<sub>2</sub>Si<sub>5</sub>N<sub>8</sub>:Eu), i.e., how the persistent luminescence can be induced. Both the temperature at which the phosphors are excited and the spectral distribution of the excitation light on the ability to store energy in the phosphors' lattices are investigated. We show that for these phosphors this storage process is thermally activated upon excitation in the lower 5d excited states of Eu<sup>2+</sup>, with the lowest thermal barrier for europium doped Ca<sub>2</sub>Si<sub>5</sub>N<sub>8</sub>. Also, the influence of co-doping with thulium on the trap filling and afterglow behavior is studied. Finally there exists a clear relation between the luminescence quenching temperature and the trap filling efficiency. The latter relation can be utilized to select new efficient 5d-4f based afterglow phosphors.</div></front></TEI><affiliations><list><country><li>Belgique</li><li>Pays-Bas</li></country><region><li>Province de Flandre-Orientale</li><li>Région flamande</li></region><settlement><li>Gand</li></settlement><orgName><li>Université de Gand</li></orgName></list><tree><country name="Belgique"><region name="Province de Flandre-Orientale"><name sortKey="Smet, Philippe F" sort="Smet, Philippe F" uniqKey="Smet P" first="Philippe F." last="Smet">Philippe F. Smet</name></region><name sortKey="Smet, Philippe F" sort="Smet, Philippe F" uniqKey="Smet P" first="Philippe F." last="Smet">Philippe F. Smet</name><name sortKey="Van Den Eeckhout, Ken" sort="Van Den Eeckhout, Ken" uniqKey="Van Den Eeckhout K" first="Ken" last="Van Den Eeckhout">Ken Van Den Eeckhout</name><name sortKey="Van Den Eeckhout, Ken" sort="Van Den Eeckhout, Ken" uniqKey="Van Den Eeckhout K" first="Ken" last="Van Den Eeckhout">Ken Van Den Eeckhout</name></country><country name="Pays-Bas"><noRegion><name sortKey="Bos, Adrie J J" sort="Bos, Adrie J J" uniqKey="Bos A" first="Adrie J. J." last="Bos">Adrie J. J. Bos</name></noRegion><name sortKey="Dorenbos, Pieter" sort="Dorenbos, Pieter" uniqKey="Dorenbos P" first="Pieter" last="Dorenbos">Pieter Dorenbos</name><name sortKey="Van Der Kolk, Erik" sort="Van Der Kolk, Erik" uniqKey="Van Der Kolk E" first="Erik" last="Van Der Kolk">Erik Van Der Kolk</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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